王志忠
讲师
邮箱：wangzhizhong11@sxu.edu.cn
个人简介
王志忠，博士，讲师。2025年毕业于河北工业大学，获电子科学与技术博士学位。主要从事宽禁带半导体功率器件的设计与性能优化研究，并参与了多项产学研合作科研项目。先后在IEEE Transactions on Electron Devices、Advanced Electronic Materials和Japanese Journal of Applied Physics等国内外重要学术刊物上发表论文10余篇，发明专利1项。
教学情况
讲授本科生半导体物理、电路分析基础
学术论文
[1] Z. Wang, F. Huang, C. Chu, Y. Zhang, Q. Sun, Z.-H. Zhang*, "On the super-junction formed by using field plate for lateral AlGaN/GaN-based Schottky barrier diodes," Japanese Journal of Applied Physics, vol. 62, no. 9, pp. 094001, 2023.
[2] Z. Wang, F. Huang, C. Chu, K. Tian, H. Gong, N. Sun, Y. Zhang, Y. Li, J. Ye, Z.-H. Zhang*, 2.5 kV/1.95 GW/cm² AlGaN/GaN-based lateral Schottky barrier diodes with a High-k field plate to reduce reverse current," in IEEE Transactions on Electron Devices, vol. 71, no. 6, pp. 3811-3817, 2024.
[3] Z. Wang, J. He, F. Huang, X. Gao, K. Tian, C. Chu, Y. Zhang, X. Sun, Z.-H. Zhang*," AlGaN/GaN-based SBDs grown on silicon substrates with trenched n+-GaN cap layer and local passivation layer to improve BFOM and dynamic properties," Journal of Semiconductors, vol. 46, no. 9, pp. 092502, 2025.
[4] F. Huang, C. Chu, Z. Wang, Y. Zhang, J. Ye, Y. Lv, H. Gong, Y. Li, Z.-H. Zhang*, S. Gu, and R. Zhang, "GaN-based quasi-vertical Schottky barrier diode hybridized with p-NiO layer to achieve 1.1 kV breakdown voltage and enhance the current spreading effect," Applied Physics Express, vol. 15, no. 8, pp. 084001, 2022.
[5] F. Huang, Z. Wang, C. Chu, Q. Liu, Y. Li, Z. Xin, Y. Zhang, Q. Sun, and Z.-H. Zhang*, "MIS-Based GaN Schottky barrier diodes: interfacial conditions on the reverse and forward properties," IEEE Transactions on Electron Devices, vol. 69, no. 10, p. 5522-5529, 2022.
[6] F. Huang, C. Chu, Z. Wang, K. Tian, H. Gong, Y. Zhang, Y. Li, J. Ye, Z.-H. Zhang*, "1.43 kV GaN-based MIS Schottky barrier diodes," Journal of Physics D: Applied Physics, vol. 57, no. 18, pp.185102, 2024.
[7] X. Gao, F. He, F. Huang, Z. Wang, C. Chu, K. Tian, Y. Zhang, Z.-H. Zhang, "Investigation into the impact of bulk defects in the drift layer on the electrical properties of GaN-based trench Schottky barrier diodes," Japanese Journal of Applied Physics, vol. 63, no. 5, pp. 054003, 2024.
[8] J. He, F. Huang, Z. Wang, X. Gao, K. Tian, Y. Zhang, C. Chu, S. Cai, X. Sun, Z.-H. Zhang, "On the coupled effect of MIS-based anode and AlGaN-polarized super-junction to reduce local electric field for AlGaN/GaN Schottky barrier diodes," Japanese Journal of Applied Physics, vol. 63, no. 10, pp. 104001, 2024.
[9] X. Gao, F. Huang, Z. Wang, J. He, K. Tian, Y. Zhang, C. Chu, S. Cai, X. Sun, Z.-H. Zhang, "Comprehensive device modeling for AlGaN/GaN based Schottky barrier diodes with beveled p-GaN termination to control electric field," Physica Scripta, vol. 99, no. 11, pp. 115535, 2024.
[10] J. He, Z. Wang, F. Huang, C. Chu, K. Tian, S. Cai, Y. Zhang, X. Sun, D. Li, X. Sun, Z.-H. Zhang*," Physical model development for fabricating MIS-anode-based 1100 V AlGaN/GaN-based lateral Schottky barrier diodes grown on silicon substrate with low leakage current," Advanced electronic materials, vol. 11, no. 13, pp. 2500111, 2025.
[11] 陈宏佑, 王志忠, 黄福平, 楚春双, 张勇辉, 张紫辉* 等. 多场环结构对GaN基JBS击穿电压和正向工作电流的影响. 河北工业大学学报, 2023, 52(1): 32-40.
[2] Z. Wang, F. Huang, C. Chu, K. Tian, H. Gong, N. Sun, Y. Zhang, Y. Li, J. Ye, Z.-H. Zhang*, 2.5 kV/1.95 GW/cm² AlGaN/GaN-based lateral Schottky barrier diodes with a High-k field plate to reduce reverse current," in IEEE Transactions on Electron Devices, vol. 71, no. 6, pp. 3811-3817, 2024.
[3] Z. Wang, J. He, F. Huang, X. Gao, K. Tian, C. Chu, Y. Zhang, X. Sun, Z.-H. Zhang*," AlGaN/GaN-based SBDs grown on silicon substrates with trenched n+-GaN cap layer and local passivation layer to improve BFOM and dynamic properties," Journal of Semiconductors, vol. 46, no. 9, pp. 092502, 2025.
[4] F. Huang, C. Chu, Z. Wang, Y. Zhang, J. Ye, Y. Lv, H. Gong, Y. Li, Z.-H. Zhang*, S. Gu, and R. Zhang, "GaN-based quasi-vertical Schottky barrier diode hybridized with p-NiO layer to achieve 1.1 kV breakdown voltage and enhance the current spreading effect," Applied Physics Express, vol. 15, no. 8, pp. 084001, 2022.
[5] F. Huang, Z. Wang, C. Chu, Q. Liu, Y. Li, Z. Xin, Y. Zhang, Q. Sun, and Z.-H. Zhang*, "MIS-Based GaN Schottky barrier diodes: interfacial conditions on the reverse and forward properties," IEEE Transactions on Electron Devices, vol. 69, no. 10, p. 5522-5529, 2022.
[6] F. Huang, C. Chu, Z. Wang, K. Tian, H. Gong, Y. Zhang, Y. Li, J. Ye, Z.-H. Zhang*, "1.43 kV GaN-based MIS Schottky barrier diodes," Journal of Physics D: Applied Physics, vol. 57, no. 18, pp.185102, 2024.
[7] X. Gao, F. He, F. Huang, Z. Wang, C. Chu, K. Tian, Y. Zhang, Z.-H. Zhang, "Investigation into the impact of bulk defects in the drift layer on the electrical properties of GaN-based trench Schottky barrier diodes," Japanese Journal of Applied Physics, vol. 63, no. 5, pp. 054003, 2024.
[8] J. He, F. Huang, Z. Wang, X. Gao, K. Tian, Y. Zhang, C. Chu, S. Cai, X. Sun, Z.-H. Zhang, "On the coupled effect of MIS-based anode and AlGaN-polarized super-junction to reduce local electric field for AlGaN/GaN Schottky barrier diodes," Japanese Journal of Applied Physics, vol. 63, no. 10, pp. 104001, 2024.
[9] X. Gao, F. Huang, Z. Wang, J. He, K. Tian, Y. Zhang, C. Chu, S. Cai, X. Sun, Z.-H. Zhang, "Comprehensive device modeling for AlGaN/GaN based Schottky barrier diodes with beveled p-GaN termination to control electric field," Physica Scripta, vol. 99, no. 11, pp. 115535, 2024.
[10] J. He, Z. Wang, F. Huang, C. Chu, K. Tian, S. Cai, Y. Zhang, X. Sun, D. Li, X. Sun, Z.-H. Zhang*," Physical model development for fabricating MIS-anode-based 1100 V AlGaN/GaN-based lateral Schottky barrier diodes grown on silicon substrate with low leakage current," Advanced electronic materials, vol. 11, no. 13, pp. 2500111, 2025.
[11] 陈宏佑, 王志忠, 黄福平, 楚春双, 张勇辉, 张紫辉* 等. 多场环结构对GaN基JBS击穿电压和正向工作电流的影响. 河北工业大学学报, 2023, 52(1): 32-40.
专利
[1] 张紫辉，王志忠，张勇辉，一种具有部分n+-GaN盖帽层的AlGaN/GaN 异质结肖特基二极管结构， 202510103869.7
